A method of forming a magnetic tunneling junction (mtj) mram device and a tunneling magnetoresistive (tmr) read head

ABSTRACT

An MTJ (magnetic tunneling junction) device particularly suitable for use as an MRAM (magnetic random access memory) or a tunneling magnetoresistive (TMR) read sensor, is formed on a seed layer which allows the tunneling barrier layer to be ultra-thin, smooth, and to have a high breakdown voltage. The seed layer is a layer of NiCr which is formed on a sputter-etched layer of Ta. The tunneling barrier layer for the MRAM is formed from a thin layer of Al which is radically oxidized (ROX), in-situ, to form the layer with characteristics described above. The tunneling barrier layer for the read sensor formed from a thin layer of Al or a HfAl bilayer which is naturally oxidized (NOX), in-situ, to form the barrier layer. The resulting device has generally improved performance characteristics in terms of GMR ratio and junction resistance.

RELATED PATENT APPLICATION

This application is related to Docket No. HT 02-019, Ser. No.10/371,841, filing date Feb. 20, 2003, Docket No. HT 03-016, Ser. No.10/820,391, filing date Apr. 8, 2004, and Docket No. HT 02-032, Ser. No.10/768,917, filing date Jan. 30, 2004, assigned to the same assignee asthe current invention.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates generally to magnetic tunneling junction (MTJ)devices such as MRAMs and read-heads and more particularly to the use ofa novel seed layer that allows the formation of a junction layer ofsuperior physical properties.

2. Description of the Related Art

The magnetic tunneling junction device (MTJ device) is essentially avariable resistor in which the relative orientation of magnetic fieldsin an upper and lower very thin dielectric layer (the tunneling barrierlayer) formed between those electrodes. As electrons pass through theupper electrode they are spin polarized by its magnetization direction.The probability of an electron tunneling through the interveningtunneling barrier layer then depends on the magnetization direction ofthe lower electrode. Because the tunneling probability is spindependent, the current depends upon the relative orientation of themagnetizations of magnetic layers above and below the barrier layer.Most advantageously, one of the two magnetic layers (the pinned layer)in the MTJ has its magnetization fixed in direction, while the otherlayer (the free layer) has its magnetization free to move in response toan external stimulus. If the magnetization of the free layer is allowedto move continuously, as when it is acted on by a continuously varyingexternal magnetic field, the device acts as a variable resistor and itcan be used as a read-head. If the magnetization of the free layer isrestricted to only two orientations relative to the fixed layer(parallel and anti-parallel), the first of which produces a lowresistance (high tunneling probability) and the second of which producesa high resistance (low tunneling probability), then the device behavesas a switch, and it can be used for data storage and retrieval (a MRAM).

Magnetic tunneling junction devices are now being utilized asinformation storage elements in magnetic random access memories (MRAMs).Typically, when used as an information storage or memory device,magnetic fields produced by orthogonally intersecting current carryinglines (digit and bit lines) orient the magnetization of the free layerso that it is either parallel or anti-parallel to the pinned layer; at alater time a sensing current passed through the MTJ indicates if it isin a high (antiparallel) or low (parallel) resistance state.

When used as a read head, (called a TMR read head, or “tunnelingmagnetoresistive” read head) the free layer magnetization is moved bythe influence of the external magnetic fields of a recorded medium, suchas is produced by a moving hard disk or tape. As the free layermagnetization varies in direction, a sense current passing between theupper and lower electrodes and tunneling through the barrier layer feelsa varying resistance and a varying voltage appears across theelectrodes. This voltage, in turn, is interpreted by external circuitryand converted into a representation of the information stored in themedium.

Whether it is used as an MRAM or as a TMR read head, fabrication of ahigh quality MTJ device presents considerable difficulties due to thenecessity of forming layers of extreme thinness. Sun et al. (U.S. Pat.No. 6,574,079) provides a particularly well written statement of some ofthese difficulties. First, to obtain effective spin polarization of theconduction electrons, the magnetization of the electrode layers must bestrong. This is itself a problem, since the layers are exceptionallythin. Second, the resistance of the tunneling barrier layer is typicallyhigh, which results in a poor ratio of signal-to-noise (S/N) in readhead applications. If the resistance of the barrier layer is lowered byexcessively thinning that layer, then fabrication processes such aslapping the air-bearing surface of the read head can create shortsthrough the barrier layer. Sun et al. teach the formation of a thinbarrier layer within a general configuration of the following form:

-   -   Ta/NiFe/CoFe/Barrier/CoFe/Ru/CoFe/PtMn/Ta        with Ta/Cu/Ta used as top and bottom leads. In the configuration        of Sun et al. shown above, Ta is a seed layer, NiFe/CoFe is a        free layer, CoFe/Ru/CoFe is a pinned (fixed) layer, PtMn is a        pinning layer and Ta is a protective capping layer. Sun et al.        find that a preferred barrier layer within the given        configuration is a layer of oxidized NiCr, ie NiCrOx. The        barrier layer so formed yields a junction resistance, RA, (area        of junction, A, times total resistance, R) of about: RA=6.6        Ωμm².

Applicants have discovered other recent prior art (commerciallyproduced) TMR read head configurations analogous to that taught by Sunet al., including:

-   -   Ta/NiFe/MnPt/CoFe(10%)/Ru/CoFe(50%)/Al/NOX/CoFe—NiFe(18%)/Ta    -   Ta/NiFe/IrMn/CoFe(16%)/Al(4.5)Hf(1.5)/NOX/CoFe—NiFe(18%)/Ta        In the above notation Al/NOX refers to an aluminum layer that        has been naturally oxidized to form an insulating barrier layer.        Al (4.5)Hf(1.5)/NOX refers to a 4.5 angstrom aluminum layer over        which is deposited 1.5 angstroms of Hafnium, with the composite        layer then being naturally oxidized. CoFe(16%) refers to a CoFe        alloy with 16% Fe by number of atoms. In each of the above        configurations NiFe is a buffer layer for growing the        antiferromagnetic layer of MnPt or IrMn.

Applicants have found that a tunneling junction with improvedperformance over those of the prior art, particularly those cited above,can be made using a novel seed layer and method of forming it. Thetunneling junction so formed, which can also be used in either a TMRconfiguration or an MRAM configuration, is capable of producing ajunction resistance of RA≅1 Ωμm² and a GMR ratio, DR/R>10% and adielectric breakdown voltage, V_(b)>0.5 volts.

SUMMARY OF THE INVENTION

A first object of this invention is to provide a method of forming asmooth, ultra thin tunneling barrier layer suitable for incorporation ina TMR read head or an MTJ MRAM.

A second object of this invention is to provide such a tunneling barrierlayer with low junction resistance, high GMR ratio and high breakdownvoltage which can be used in a read head suitable for reading recordingsof high density (>100 Gb/in²).

A third object of this invention is to provide a method of forming anMTJ MRAM element with a very smooth and flat bottom electrode (pinnedlayer), on which can be formed a tunnel barrier layer having theproperties listed above.

A fourth object of the present invention is to provide an MTJ MRAMelement having well controlled free layer magnetization, well controlledmagnetization of the pinned layer as evidenced by a large exchange fieldand thermal stability and a tunneling barrier layer with physicalintegrity.

The objects of the present invention will be achieved in both an TMRread head or an MTJ MRAM configuration by a method that improves thetopography (reduces roughness) of the bottom electrode in the MRAM orthe pinned layer of the TMR read head and allows the formation of anultra-thin tunneling barrier layer that meets the requirements set forthabove.

An MRAM bottom electrode configuration normally has the form:

-   -   Ta/NiFe/MnPt (or IrMn)/CoFe (or CoFe/Ru/CoFe).        Here, Ta plays the role of a capping layer for the conducting        lead (which is not indicated but which could be NiCr/Ru), NiFe        plays the role of a buffer or seed layer (to promote superior        structure of subsequently deposited layers), MnPt is an        antiferromagnetic (AFM) pinning layer (sometimes abbreviated MP)        and CoFe alone or a CoFe/Ru/CoFe laminate is a pinned layer. It        is well known in the art that the roughness of the bottom        electrode (the MnPt/CoFe portion) is greatly affected by the        seed layer on which it is grown (NiFe above). We have found        that, depending on the conducting lead material, the Ta capping        layer will grow in either its α-phase (body-centered cubic), or        its β-phase (tetragonal). It is also known that an NiFe layer        deposited on the Ta layer grows with a strong (111) crystal        orientation in the plane of the layer. Thus, when the MnPt (or        IrMn) antiferromagnetic material is deposited onto the (111)        oriented NiFe layer, a highly desirable large exchange pinning        field is obtained. However, the remaining objects of a high GMR        ratio low junction resistance and high breakdown strength of the        barrier layer are not obtained.

To meet the all the objects of this invention, it was decided to useNiCr as a buffer (seed) layer rather than the conventional NiFe and toform it on the Ta layer after a sputter-etch process of the Ta layer.The Ta layer is itself formed on a NiCr/Ru conducting lead layer. It hasalready been demonstrated in commonly assigned Application HT 02-019,which is fully incorporated herein by reference, that a Ru lead layerformed on a NiCr seed layer is advantageous for the further depositionof smooth layers, so the formation of a sputtered Ta layer on the Rulayer produces a smooth surface also on the Ta. The Ta is thensputter-etched and a second NiCr seed layer is formed upon it. It is theformation of this second NiCr seed layer on the sputter-etched Taunderlayer that allows the objects of this invention to be achieved asfollows.

Two differently configured sensor stack configurations for a TMR sensorare used in this invention:

(A):

-   Ta60/SE Ta30/NiCr40/AFM/SyAP/Al 5.75/NOX/CoFe(10%)-NiFe(18%)/Ta    (B):-   Ta60/SE Ta30/NiCr40/AFM/SyAP/Al 4.5-Hf    1.5/NOX/CoFe(10%)-NiFe(18%)/Ta    In both (A) and (B), the particular notation: Ta60/SE Ta30,    indicates that a 60 angstrom layer of Ta has been deposited as a    capping layer on an underlying conduction lead layer (which is not    indicated) and then between 20 and 30 angstroms of that 60 angstrom    layer of Ta is removed by sputter-etching (SE) it. The NiCr buffer    (seed) layer is then deposited on the sputter-etched Ta underlayer.    The sputter etched surface of the Ta promotes a smooth flat    overlayer, which in this case is the NiCr buffer (seed) layer.

An antiferromagnetic pinning layer, symbolized AFM, is deposited on theNiCr. The AFM can be MnPt 150 angstroms thick (or IrMn 90 angstromsthick). A synthetic antiferromagnetic pinned layer (SyAP) is formed onthe AFM, in this case the SyAP is CoFe(10%)/Ru7.5/CoFe(50%), orCoFe(10%)/Ru7.5/CoFe(25%), where the numbers in percents (%) refer toatom percentages of Fe in the CoFe alloy. A layer of aluminum (Al), 5.75angstroms thick is then deposited on the SyAP and is oxidized by aprocess of in-situ natural oxidation (NOX) to form a tunnel barrierlayer. It is to be noted that oxidation of such a thin Al layer is mostadvantageously done by NOX, whereas oxidation of thicker layer, such as7-12 angstroms of Al, is more advantageously done by radical oxidation(ROX), which is fully explained in related Application HT 03-016 whichis fully incorporated herein by reference. As will be further discussed,the 5.75 angstrom Al layer is a double atomic layer of Al. This NOXprocess is taught in commonly assigned Application HT 02-032, fullyincorporated herein by reference. Note that the difference betweenconfigurations (A) and (B) is that in (B) the NOX barrier layer is abilayer of Al 4.5-Hf 1.5. A free layer of CoFe(10%)-NiFe(18%) is thenformed over the naturally oxidized aluminum (or aluminum-hafnium) and asecond Ta capping layer is formed over the free layer.

The importance of the sputter-etched Ta layer on which is grown the NiCrseed layer in achieving the objects of this invention (high GMR ratio,low junction resistance, high breakdown voltage) is shown by the resultsof experiments we performed. In these experiments we compared prior artmethods of forming magnetic tunnel junction (MTJ) MRAM devices with themethod of the present invention. The prior art methods had already beenshown to provide very high quality performance, but the method of thepresent invention provided improvements in all areas. In this experimentwe formed four different bottom electrodes for an MRAM device and formedidentical ROX aluminum barrier layers of initial 10 angstrom thickness.The four configurations are shown in the following table and arecompared in terms of their GMR ratio (DR/R), junction resistance, RA,and breakdown voltage, V_(b). # Bottom Electrode Structure DR/R(%)RA(Ωμm²) V_(b)(v) 1 Ta/SE/NiCr40/MP150/CoFe40/Al 36 3755 1.65 10-ROX 2Ta/SE/NiFe50/MP150/CoFe40/Al 22 1200 1.30 10-ROX 3Ta/SE/NiFe40/MnIr90/CoFe40/Al 21 1900 1.40 10-ROX 4Ta/NiCr40/MP150/CoFe40/Al 8-15 400-1000 <1.10 10-ROX

Structures #1,2 and 3 are all formed on a sputter-etched (SE) Ta layerand are superior in all parameters over structure #4 in which the Talayer is not sputter-etched. Structures #2 and 3 include thesputter-etched Ta layer but use the prior art NiFe seed layer.Structures #2 and 3 differ only in the material of the AFM pinninglayer, ie. MnPt vs. IrMn. The measured differences between #2 and #3 aresmall. Structure #1 is the present invention, and embodies thesputter-etched Ta on which is formed the NiCr seed layer. Structure #1is superior in all respects to structures #2, #3 and #4. In particular,the high junction resistance indicates a proper degree of Al oxidation,whereas the lower junction resistance of structures #2,3 and 4 indicateunder-oxidation has occurred. As is disclosed in HT 03-016, the ROXtreatment of all structures is carried out in a plasma oxidation chamberfurnished with a grid between the electrode that ionizes the oxygen andthe surface being oxidized. The ionized oxygen, in passing through thegrid, creates a shower of oxygen radicals, including atomic, molecularand ionized oxygen, which impinge on the surface with less energy thanin plasma oxidation, where the oxygen is not reduced in energy by thegrid. In addition to the measured values noted in the table above,high-resolution TEM images strongly support the effectiveness of thepresent invention and show a very smooth and conformal oxidized Al layerwhen the method of the present invention is used.

MRAM Configuration

The bottom electrode, #1 in the table, would be incorporated in thefollowing MRAM element that would achieve the objects of the presentinvention:

-   NiCr/Ru400/Ta/SE/NiCr40/MP 150/CoFe40/Al 10/ROX/CoFe20/NiFe40/Ru250.    In the above configuration NiCr/Ru400/Ta is a smooth bottom    conducting lead. Sputter-etching the Ta and forming the NiCr40 on it    produces the seed layer of the present invention. The NiCr/MP (MnPt)    150/CoFe is the smooth bottom electrode (the pinned layer). The    in-situ ROX 10 angstrom thick aluminum layer is the tunneling    barrier layer. The CoFe20/NiFe40/Ru250 is the upper (free) electrode    with its upper conducting lead layer.    TMR Read Sensor Configuration

The bottom electrode, #1, above would serve as a pinned layer for theformation of a TMR read sensor of either of the followingconfigurations:

(A):

-   Ta80/SE Ta30/NiCr40/AFM/SyAP/Al 5.75/NOX/CoFe(10%)-NiFe(18%)/Ta    (B):-   Ta80/SE Ta30/NiCr40/AFM/SyAP/Al 4.50-Hf    1.5/NOX/CoFe(10%)-NiFe(18%)/Ta    For read sensor operation the junction resistance should be as low    as possible. The minimum barrier thickness, as estimated from a    theoretical calculation, suggests that a layer of Al₂O₃ formed by    the in-situ natural oxidation of two atomic layers of Al would    already have a relatively wide band-gap, indicating good insulating    properties. Two such layers, formed in the (111) atomic plane, have    a thickness of approximately 5.75 angstroms. This is the layer    indicated in (A) above. The layer in (B) substitutes a naturally    oxidized Al—Hf layer for the Al layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 a-d are schematic cross-sectional views of the formation of anMTJ MRAM device using the method of the present invention.

FIGS. 2 a-d are schematic cross-sectional views of the formation of anTMR read head using the method of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment: MRAM device

The present invention, in a first preferred embodiment, is a method offorming an MTJ MRAM by the use of a novel NiCr seed layer formed on asputter-etched Ta layer so that the subsequently formed tunnelingjunction layer is ultra-thin and smooth and has a high breakdownvoltage. In a second preferred embodiment the present invention is amethod of forming a TMR read head having a high GMR ratio, low junctionresistance and high tunneling layer breakdown voltage, using the novelNiCr seed layer formed on a sputter-etched Ta layer.

Referring now to FIG. 1 a, there is seen in a schematic cross section aninitial stage of a preferred embodiment of the invention, the formationof a single MRAM element, which can be a part of an array of suchelements. It is to be understood that in the embodiments to be disclosedin what follows, all layer depositions take place in an ultra-highvacuum system suitable for depositing thin layers by sputtering. Inthese embodiments the system was a commercially available Anelva 7100system which includes an ultra-high vacuum a sputtering chamber as wellas a plasma oxidation chamber, but other comparable systems are alsosuitable. In the Anelva system, sputtering depositions and sputter etchprocess take place in the same system, which is a simplifying aspect ofthe fabrication process. However, this is not a necessary element of thepresent invention. It is also noted that in all the embodiments to bediscussed, when the tunneling barrier layer was to be oxidized, thefabrication already formed (having the un-oxidized layer on it) wasremoved from the sputtering chamber of the ultra-high vacuum system andplaced in a separate oxidation chamber for the oxidation process tooccur. This movement of the fabrication from one chamber to anotherwithin the system is done without a break in the vacuum. Again, it ispossible that other systems and chamber configurations may be differentand yet not affect the practice of the invention. Subsequent to theoxidation, the fabrication is replaced into the sputtering chamber ofthe ultra-high vacuum sputtering system, again without a break in thevacuum, for the remaining layer depositions.

There is shown first a substrate (10), which in this embodiment is asilicon substrate on which will be formed the MRAM element. It isunderstood that the single MRAM element to be described can be one of anarray of such elements and that such element or array may be furtherconnected to associated circuitry used in changing, storing andretrieving information. On the substrate is deposited a first seed layer(20), which in this embodiment is a layer of NiCr(35%-45%) formed to athickness between approximately 50 and 100 angstroms, with approximately50 angstroms being preferred. On the first seed layer is then formed alayer of non-magnetic metal (30), which in this embodiment is a smoothlayer of Ru, formed to a thickness between approximately 250 and 1000angstroms, with approximately 400 angstroms being preferred. On the Rulayer there is then formed a capping overlayer (40), which in thisembodiment is a layer of Ta formed to a thickness between approximately60 and 80 angstroms, with approximately 60 angstroms being preferred.

Referring now to FIG. 1 b, there is shown the Ta overlayer (40) of FIG.1 a after being sputter-etched to remove between approximately 20 and 30angstroms of its original thickness, with 30 angstroms of removal beingpreferred. This thinned, sputter-etched layer, now denoted (45), has anamorphous surface that will provide the necessary smooth overgrowth ofsubsequently deposited layers to form the barrier layer that meets theobjects of the invention. On this sputter-etched layer of Ta, there isthen formed a second seed/buffer layer (85) of NiCr(35%-45%) to athickness between approximately 30 and 50 angstroms, with 40 angstromsbeing preferred.

Referring next to FIG. 1 c, there is seen the formation of anantiferromagnetic pinning layer (50), which in this embodiment is alayer of MnPt formed to a thickness between approximately 100 and 200angstroms, with approximately 150 angstroms being preferred. On thepinning layer there is then formed a pinned layer (60), which in thisembodiment is a laminated synthetic antiferromagnetic (SyAF) structurefurther comprising first (62) and second (66) layers of CoFe betweenwhich is formed a coupling layer of Ru (64). The first CoFe layer (62)is a layer of CoFe(10%) formed to a thickness between approximately 15and 25 angstroms with 20 angstroms being preferred. The second CoFelayer (66) is a layer of CoFe(25%) or CoFe(50%) formed to a thicknessbetween approximately 10 and 20 angstroms with 15 angstroms beingpreferred. The Ru layer, formed to provide a strong antiparallelcoupling of the CoFe layer magnetizations, is formed to a thicknessbetween approximately 7 and 8 angstroms with 7.5 angstroms beingpreferred. On this pinned layer there is formed a tunneling barrierlayer (70) by first depositing an Al layer between approximately 7 and12 angstroms with approximately 10 angstroms being preferred. Thefabrication thus far formed is then removed from the sputtering chamberof the ultra-high vacuum system and placed in a plasma oxidation chamberwhere it is oxidized by a shower of oxygen radicals in a ROX oxidationprocess (shown as curved arrows). Briefly, the ROX process as applied toachieve the objects of the present invention is a plasma oxidationprocess carried out within a plasma oxidation chamber wherein agrid-like cap is placed between an upper ionizing electrode and thewafer surface being oxidized. Oxygen gas is then fed to the upperelectrode and power is supplied to the electrode to at least partiallyionize the gas. Passage of the partially ionized gas through the capproduces a shower of oxygen atoms, molecules, radicals and ions andrenders the various species produced by the electrode less energeticwhen they arrive at the wafer surface. Within the plasma chamber usedherein, an upper electrode within the chamber is fed with 0.5 liters ofoxygen gas to produce a shower of oxygen radicals. Power is supplied tothe electrode at a rate of 500 to 800 watts.

This ROX tunneling barrier layer is formed to exceptional smoothness anduniformity and has a high breakdown voltage, all being a result of itsformation over the sputter-etched Ta overlayer (40) and NiCr layer (85).

Referring next to FIG. 1 d, there is seen the formation of a free layeron the barrier layer. The free layer is preferably a layer of CoFe (82)formed to a thickness between approximately 5 and 15 angstroms withapproximately 10 angstroms being preferred, on which is formed a layerof NiFe (84) of thickness between approximately 20 and 50 angstroms withapproximately 30 angstroms being preferred. A capping and conductingupper lead layer is formed on the NiFe layer as a layer of Ru (90)between approximately 100 and 300 angstroms, with 250 angstroms beingpreferred.

Second Embodiment: TMR Sensor

Referring now to FIG. 2 a, there is seen a schematic cross-sectionalview of the initial steps of a second embodiment of the presentinvention, which is the formation of a TMR read sensor. As in the MRAMformation described above, the TMR read sensor is also formed as aseries of layers in the sputtering chamber of an ultra-high vacuumsputtering system. It is to be noted, although it is known to thoseskilled in the art, that the tunneling magnetic junction configuration,when used to form an MRAM element as in the first embodiment, is formedbetween a word line and a bit line, insulated from the former andcontacting the latter, whereas the tunneling magnetic junctionconfiguration, when used to form a magnetoresistive read sensor, ie aTMR sensor, is formed between upper and lower magnetic shields,contacting them both since they serve as conducting leads.

Referring again to FIG. 2 a, there is first seen a substrate (10), whichin this embodiment could be a lower shield/lead layer formed of NiFe andcapped with a layer of Ta (20) which is formed to a thickness between 50and 80 angstroms, with approximately 60 angstroms being preferred.Referring next to FIG. 2 b, there is shown thinned Ta layer, now denoted(25), subsequent to being sputter-etched, to remove betweenapproximately 20 and 30 angstroms of its original thickness, with 30angstroms of removal being preferred. This sputter-etch process, whichrenders the Ta surface smooth and amorphous, is in preparation for thedeposition of the NiCr seed layer (40) which, when formed on the Tasurface is the novel aspect of this invention. The NiCr seed layer isformed to a thickness between approximately 40 and 60 angstroms withapproximately 50 angstroms being preferred.

Still referring to FIG. 2 b, there is shown the formation of anantiferromagnetic pinning layer (50), which is preferably a layer ofMnPt formed to a thickness between approximately 100 and 200 angstroms,with 150 angstroms being preferred, but which can also be a layer ofIrMn formed to a thickness between approximately 50 and 100 angstromswith approximately 90 angstroms being preferred. On this pinning layerthere is then formed a pinned layer (60) which in this embodiment is alaminated synthetic structure providing a strong pinning field,comprising first (62) and second (66) layers of CoFe, between which isformed a layer of Ru (64). The first CoFe layer is CoFe(10%) and isbetween approximately 15 and 20 angstroms in thickness withapproximately 19 angstroms being preferred, the second CoFe layer isCoFe(50%) between approximately 18 and 25 angstroms in thickness withapproximately 20 angstroms being preferred and the Ru layer is betweenapproximately 7 and 8 angstroms, with approximately 7.5 angstroms beingpreferred.

Referring next to FIG. 2 c, there is shown the formation of a tunnelingbarrier layer (70), which is formed to exceptional smoothness anduniformity and has a high breakdown voltage, all being a result of itsformation over the sputter-etched tantalum and NiCr layers. The barrierlayer is a dielectric layer which in one form of this embodiment is alayer of in-situ, naturally oxidized aluminum, AlO_(x) of finalthickness between approximately 9 and 10 angstroms with approximately 9angstroms being preferred. The oxidized Al layer is formed by oxidizinga sputtered Al layer in a separate oxidation chamber where it isnaturally oxidized (NOX) in-situ. The NOX process, which isadvantageously applied to thinly formed layers, requires purging theoxidation chamber with oxygen gas at a pressure of approximately 75millitorr and leaving the as-deposited layer in contact with the oxygengas for approximately 15 minutes. The deposited Al layer is initiallyapproximately 5.75 angstroms thick and is a double atomic layer formedin the (111) crystalline plane. Such an oxidized layer, even though onlytwo atomic layers thick, already has a sufficiently wide band-gap to bean effective insulating layer and tunneling barrier layer. Thistunneling barrier layer is formed to exceptional smoothness anduniformity and has a high breakdown voltage, all being a result of itsformation over the sputter-etched tantalum and NiCr layers. In anotherversion of the embodiment, the barrier layer is formed by firstdepositing a double layer, which is a layer of Hf of thickness betweenapproximately 1 and 2 angstroms with approximately 1.5 angstroms beingpreferred, over which is deposited a layer of Al of thickness betweenapproximately 4 and 5 angstroms with approximately 4.5 angstroms beingpreferred. This double layer is then subjected to a process of in-situnatural oxidation in a manner similar to that of the Al layer alone toproduce a layer of HfAlO_(x). Once the oxidation process is complete,the fabrication is returned to the sputtering chamber of the high vacuumsystem for subsequent layer depositions.

Referring now to FIG. 2 d, there is shown the fabrication of FIG. 2 c,now returned to the sputtering chamber. On the barrier layer (70), thereis then formed a ferromagnetic free layer (80), which in this embodimentis a laminated layer comprising a layer (82) of CoFe (10%) of thicknessbetween approximately 5 and 15 angstroms with approximately 10 angstromsbeing preferred, on which is formed a layer (84) of NiFe (18%) ofthickness between approximately 20 and 50 angstroms with approximately40 angstroms being preferred. On the free layer is then formed an uppercapping layer (90), which in this embodiment can be a layer of Ta formedto a thickness between approximately 200 and 300 angstroms, withapproximately 250 angstroms being preferred. An NiFe upper shield andconducting lead layer (100) is then formed on the capping layer.

As is understood by a person skilled in the art, the preferredembodiments of the present invention are illustrative of the presentinvention rather than limiting of the present invention. Revisions andmodifications may be made to methods, materials, structures anddimensions employed in forming and providing an MTJ device in either aTMR read head configuration or in an MRAM configuration, said deviceshaving a smooth, uniform and ultra-thin tunneling barrier layer of highbreakdown voltage, while still forming and providing such a device andits method of formation in accord with the spirit and scope of thepresent invention as defined by the appended claims.

1-10. (canceled)
 11. A method of forming a magnetic tunneling junction(MTJ) MRAM device with an ultra-thin tunneling barrier layer of highsmoothness and breakdown voltage comprising: providing a substratehaving a substantially planar upper surface; forming a first NiCr seedlayer on said substrate; forming a non-magnetic metal layer on said seedlayer; forming a Ta overlayer on said metal layer and sputter-etchingsaid overlayer; forming a second NiCr seed layer on said sputter-etchedTa overlayer; forming an AFM pinning layer on said seed layer; forming apinned layer on said pinning layer; forming a layer of Al on said pinnedlayer; and oxidizing said Al layer in a plasma oxidation chamber, by aprocess of radical oxidation, to form a tunneling barrier layer on saidpinned layer, said tunneling barrier layer being ultra-thin, smooth andhaving a high breakdown voltage as a result of the NiCr seed layerformed on the sputter-etched Ta overlayer; and forming a free layer onsaid tunneling barrier layer; forming an upper capping layer on saidfree layer.
 12. The method of claim 11 wherein all layer formations areby sputtering in an ultra-high vacuum sputtering chamber.
 13. The methodof claim 11 wherein said first and second NiCr seed layers are formed ofNiCr having 35%-45% Cr by number of atoms.
 14. The method of claim 11wherein the metal layer is a layer of Ru formed to a thickness betweenapproximately 250 and 1000 angstroms.
 15. The method of claim 11 whereinthe overlayer of Ta is formed to a thickness between approximately 60and 80 angstroms and is then sputter-etched to remove betweenapproximately 20 and 30 angstroms of said Ta and to render thesputter-etched surface smooth and amorphous.
 16. The method of claim 11wherein the formation of the synthetic pinned layer comprises: forming afirst ferromagnetic layer, which is a layer of CoFe(10%), to a thicknessbetween approximately 15 and 25 angstroms; forming a coupling layer ofRu, to a thickness between approximately 7 and 8 angstroms on said firstlayer; forming a second ferromagnetic layer, which is a layer ofCoFe(25%) or CoFe(50%), to a thickness between approximately 10 and 20angstroms; magnetically coupling the two CoFe layers with antiparallelmagnetizations.
 17. The method of claim 11 wherein the Al layer isformed to a thickness between approximately 7 and 12 angstroms.
 18. Themethod of claim 11 wherein the process of radical oxidation of said Allayer further comprises: placing the Al layer into a plasma oxidationchamber that includes an upper electrode, a lower electrode and a gridpositioned between said electrodes; placing said Al layer in contactwith the lower electrode; feeding the upper electrode within the chamberwith 0.5 liters of oxygen gas while providing power to the upperelectrode at a rate of between 500 and 800 watts to produce a shower ofoxygen radicals through said grid which impinge on said Al layer. 19.The method of claim 11 wherein the ferromagnetic free layer is formed asa double layer comprising a layer of CoFe formed to a thickness betweenapproximately 5 and 15 angstroms on which is formed a layer of NiFe of athickness between approximately 20 and 50 angstroms.
 20. The method ofclaim 11 wherein the upper capping layer is formed as a layer of Ru to athickness of between approximately 200 and 300 angstroms. 21-29.(canceled)
 30. A method of forming a tunneling magnetoresistive (TMR)read head with an ultra-thin tunneling barrier layer of high smoothnessand breakdown voltage comprising: providing a substrate, which is anNiFe lower shield and conducting lead layer having a substantiallyplanar upper surface; forming a Ta overlayer on said substrate;sputter-etching said Ta overlayer, reducing it in thickness andrendering its upper surface smooth and amorphous; forming an NiCr seedlayer on said sputter-etched Ta overlayer; forming an AFM pinning layeron said seed layer; forming a synthetic pinned layer on said pinninglayer; forming a naturally oxidized tunneling barrier layer on saidpinned layer, said tunneling barrier layer being smooth and homogeneousas a result of being formed on said Ta sputter-etched overlayer and saidNiCr seed layer; forming a free layer on said tunneling barrier layer;forming an upper capping layer on said free layer; and forming an NiFeupper shield and conducting lead layer on said capping layer.
 31. Themethod of claim 30 wherein all layer formations are by sputtering in anultra-high vacuum sputtering chamber.
 32. The method of claim 30 whereinsaid NiCr seed layer is formed of NiCr having 35%-45% Cr by number ofatoms.
 33. The method of claim 30 wherein the overlayer of Ta is formedto a thickness between approximately 60 and 80 angstroms and issputter-etched to remove between approximately 20 and 30 angstroms andto render the sputter-etched surface smooth and amorphous.
 34. Themethod of claim 30 wherein the antiferromagnetic pinning layer is alayer of MnPt formed to a thickness of between approximately 100 and 200angstroms.
 35. The method of claim 30 wherein the formation of thesynthetic pinned layer comprises: forming a first ferromagnetic layer ofCoFe(10%) formed to a thickness between approximately 20 and 25angstroms; forming a coupling layer of Ru on said first ferromagneticlayer, to a thickness between approximately 7 and 8 angstroms forming asecond ferromagnetic layer of CoFe(50%) on said Ru layer, to a thicknessbetween approximately 25 and 30 angstroms.
 36. The method of claim 30wherein the process of forming a naturally oxidized tunneling barrierlayer comprises: forming a layer of Al or a bilayer of HfAl on saidpinned layer; placing said formation into an oxidation chamber; purgingsaid chamber with oxygen gas at approximately 75 millitorr pressure;leaving the fabrication in the chamber for approximately 15 minutes. 37.The method of claim 36 wherein said Al layer is formed to a thickness ofapproximately 5.75 angstroms, as a double atomic layer in the (111)crystal plane and, when oxidized, forms a layer having the wide band-gapof an insulating material.
 38. The method of claim 36 wherein the Hflayer of said HfAl bilayer is formed to a thickness of betweenapproximately 1 and 2 angstroms and the Al layer is formed to athickness of between approximately 4 and 5 angstroms.